Jon M. Pikal

Jon M. Pikal

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Education:

• B.S. Electrical Engineering, Perdue University (1988)
• M.S. Electrical Engineering, University of Colorado (1993)
• Ph.D. Electrical Engineering, Colorado State University (1999)

 

Experience:

• Associate Professor, University of Wyoming  2005 - present 
• Assistant Professor, University of Wyoming  1999 - 2005 
• Product Engineer, Intel Corp  1989 - 1991  

 

Areas of Expertise:

Semiconductor Materials and Devices, Optoelectronic Devices, Solar Cells, Semiconductor Lasers

Our current project in solar cells is a interdisciplinary project between physics, chemistry, geology, and electrical engineering. This project involves using quantum dots attached to ternary oxide nanowires for efficient energy conversion. We will study different materials and attachment methods to investigate how these effect the overall performance of the solar cell.  

Our semiconductor laser research centers around investigation of charge carrier processes, specifically carrier capture, escape and recombination in quantum dot semiconductor lasers. The studies look to understand the temperature dependence of the threshold current in long wavelength and optimization of laser materials and structure design.

Selected Publications:

• Xu, Lifang, Dinesh Patel, Carmen S. Menoni, Jon M. Pikal, Jeng-Ya Yeh, J. Y. T. Huang, Luke J. Mawst, and Nelson Tansu. "Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Wells." 4.6 (2012): n. pag. Web.
  
  
• Singh, Umesh, Amit A. Dikshit, and Jon M. Pikal. "Rate Equation Modeling of Current Injection Efficiency in 1.3-micrometer InAs-InGaAs Quantum Dot Lasers." Proc. SPIE 8619, Phusics and Simulation of Optoelectronic Devices XXI, 861926 (March 14, 2013)